Takimiya Kazuo, Kunugi Yoshihito, Konda Yasushi, Ebata Hideaki, Toyoshima Yuta, Otsubo Tetsuo
Department of Applied Chemistry, Graduate School of Engineering, Hiroshima University, 1-4-1 Kagamiyama, Higashi-Hiroshima 739-8527, Japan.
J Am Chem Soc. 2006 Mar 8;128(9):3044-50. doi: 10.1021/ja057641k.
[1]Benzoselenopheno[3,2-b][1]benzoselenophene (BSBS) and its 2,7-diphenyl derivative (DPh-BSBS) were readily synthesized from diphenylacetylene and bis(biphenyl-4-yl)acetylene, respectively, with a newly developed straightforward selenocyclization protocol. In contrast to the parent BSBS that has poor film-forming properties, the diphenyl derivative DPh-BSBS formed a good thin film on the Si/SiO(2) substrate by vapor deposition. X-ray diffraction examination revealed that this film consists of highly ordered molecules that are nearly perpendicular to the substrate, making it suitable for use in the fabrication of organic field-effect transistors (OFETs). When fabricated at different substrate temperatures (room temperature, 60 degrees C, and 100 degrees C) in a "top-contact" configuration, all the DPh-BSBS-based OFET devices exhibited excellent p-channel field-effect properties with hole mobilities >0.1 cm(2) V(-1) s(-1) and current on/off ratios of approximately 10(6). This high performance was essentially maintained over 3000 continuous scans between V(g) = +20 and -100 V and reproduced even after storage under ambient laboratory conditions for at least one year.
[1] 苯并硒吩并[3,2-b][1]苯并硒吩（BSBS）及其2,7-二苯基衍生物（DPh-BSBS）分别通过一种新开发的直接硒环化方法，由二苯乙炔和双（联苯-4-基）乙炔轻松合成。与成膜性能较差的母体BSBS不同，二苯基衍生物DPh-BSBS通过气相沉积在Si/SiO₂衬底上形成了良好的薄膜。X射线衍射检查表明，该薄膜由几乎垂直于衬底的高度有序分子组成，使其适用于有机场效应晶体管（OFET）的制造。当以“顶接触”配置在不同衬底温度（室温、60℃和100℃）下制造时，所有基于DPh-BSBS的OFET器件均表现出优异的p沟道场效应特性，空穴迁移率>0.1 cm² V⁻¹ s⁻¹，电流开/关比约为10⁶。在V(g)= +20和 -100 V之间进行3000次连续扫描后，这种高性能基本保持不变，并且即使在实验室环境条件下储存至少一年后仍能重现。
