Takimiya Kazuo, Ebata Hideaki, Sakamoto Katsuhiro, Izawa Takafumi, Otsubo Tetsuo, Kunugi Yoshihito
Department of Applied Chemistry, Graduate School of Engineering, Hiroshima University, Higashi-Hiroshima 739-8527, Japan.
J Am Chem Soc. 2006 Oct 4;128(39):12604-5. doi: 10.1021/ja064052l.
Vapor-deposited thin films of a newly developed sulfur-containing heteroarene, 2,7-diphenyl[1]benzothieno[3,2-b][1]benzothiophene (DPh-BTBT), were used as an active layer of OFETs, which showed excellent FET characteristics in ambient conditions with mobilities of approximately 2.0 cm2 V-1 s-1 and Ion/Ioff of 107.
一种新开发的含硫杂芳烃2,7-二苯基[1]苯并噻吩并[3,2-b][1]苯并噻吩(DPh-BTBT)的气相沉积薄膜被用作有机场效应晶体管(OFET)的有源层,该晶体管在环境条件下表现出优异的场效应晶体管特性,迁移率约为2.0 cm² V⁻¹ s⁻¹,开态/关态电流比为10⁷。