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电子通过硫醇端功能化四苯基卟啉和金属四苯基卟啉的自组装单分子层的传输。

Electron transport through a self-assembled monolayer of thiol-end-functionalized tetraphenylporphines and metal tetraphenylporphines.

作者信息

Lu Xiaoquan, Li Minrui, Yang Chunhe, Zhang Limin, Li Yongfang, Jiang Lang, Li Hongxiang, Jiang Lei, Liu Caiming, Hu Wenping

机构信息

College of Chemistry and Chemical Engineering, Northwest Normal University, Lanzhou 730070, PR China.

出版信息

Langmuir. 2006 Mar 28;22(7):3035-9. doi: 10.1021/la052051l.

Abstract

The monolayers of several thiol-end-functionalized tetraphenylphophines (SH-TPP) and metal tetraphenylporphines (SH-MTPP) were self-assembled on gold surfaces and identified by cyclic voltammetry (CV), electrochemical impedance spectroscopy, scanning electrochemical microscopy, and the contact angle. The CV peaks of the [Fe(CN)6]3-/ [Fe(CN)6]4- couple were used to identify the efficiency of electrons transferring through the self-assembled monolayer (SAM). The results suggested that SH-TPP and SH-MTPP could form high-quality SAMs on gold surfaces. The SAMs blocked electron transport from the gold electrode to solution. When the length of the thiol-end-link spacer (alkyl group) increased, the electron transport ability of the SAM decreased because of the increased insulator properties of the alkyl chain. With the insertion of metallic ions, the electron transport ability of the SAM of SH-MTPP increased compared to that of the SAM of SH-TPP, which was probably due to the fact that (i) the insertion of metallic ions changed the molecular structure and the molecular structure of SH-MTPP played an important role in electron transport through the SAM and (ii) the insertion of metallic ions increased the electron tunneling probability through the monolayer.

摘要

几种硫醇端基功能化的四苯基膦(SH-TPP)和金属四苯基卟啉(SH-MTPP)的单分子层在金表面自组装,并通过循环伏安法(CV)、电化学阻抗谱、扫描电化学显微镜和接触角进行鉴定。[Fe(CN)6]3-/[Fe(CN)6]4-电对的CV峰用于确定通过自组装单分子层(SAM)的电子转移效率。结果表明,SH-TPP和SH-MTPP可以在金表面形成高质量的SAMs。这些SAMs阻断了从金电极到溶液的电子传输。当硫醇端基连接间隔基(烷基)的长度增加时,由于烷基链绝缘性能的增加,SAM的电子传输能力下降。随着金属离子的插入,与SH-TPP的SAM相比,SH-MTPP的SAM的电子传输能力增加,这可能是由于:(i)金属离子的插入改变了分子结构,并且SH-MTPP的分子结构在通过SAM的电子传输中起重要作用;(ii)金属离子的插入增加了通过单分子层的电子隧穿概率。

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