Cheynet M C, Pantel R
LTPCM-ENSEEG-CNRS (UMR 5614), BP 75, F-38402 Saint Martin-d'Hères, France.
Micron. 2006;37(5):377-84. doi: 10.1016/j.micron.2006.01.009. Epub 2006 Feb 24.
Valence and Core Electron Energy Loss Spectroscopy (VEELS and CEELS) experiments are performed from nanocrystallized nickel silicide thin films. Three different silicide compounds are identified in the films. Their chemical compositions are determined from Ni-L(2,3) to Si-K core edges quantification. The results obtained are coherent within less than 2% error with the pure Ni2Si, NiSi and NiSi2 phases. The analysis of the shape and energy position of Ni-L(2,3) near edge structures and volume plasmon peaks indicates that both are reliable signatures to identify unambiguously each compound. Nickel silicides low-loss spectra have been submitted as references to the EELS database (www.cemes.fr~eelsdb). Low-loss spectra are processed to extract single scattering spectra and determine the dielectric function. The results show that nickel silicides dielectric functions deduced from VEELS are in quite good agreement with epsilon1 and epsilon2 deduced from ellipsometry experiments. The optical properties (refractive index (n), absorption coefficient (k), reflectivity (R%) and resistivity (rho(opt))), calculated from VEELS dielectric function are then compared in details with the data resulting from others techniques available in the literature. We show that, except some minor divergences, the nickel silicides optical properties are generally well reproduced. This indicates that VEELS is a relevant technique for accessing reliably to physical properties and can be a successful alternative to conventional techniques when high spatial resolution is needed.
对纳米晶态硅化镍薄膜进行了价电子和芯电子能量损失谱(VEELS和CEELS)实验。在薄膜中鉴定出三种不同的硅化物化合物。通过对从Ni-L(2,3)到Si-K芯边的定量分析确定了它们的化学成分。所得结果与纯Ni2Si、NiSi和NiSi2相的误差在2%以内,具有一致性。对Ni-L(2,3)近边结构和体等离子体峰的形状和能量位置的分析表明,两者都是明确识别每种化合物的可靠特征。硅化镍低损耗谱已作为参考提交至EELS数据库(www.cemes.fr~eelsdb)。对低损耗谱进行处理以提取单次散射谱并确定介电函数。结果表明,从VEELS推导的硅化镍介电函数与椭圆偏振光谱实验推导的ε1和ε2相当吻合。然后将根据VEELS介电函数计算的光学性质(折射率(n)、吸收系数(k)、反射率(R%)和电阻率(ρ(opt)))与文献中其他可用技术得到的数据进行详细比较。我们表明,除了一些小的差异外,硅化镍的光学性质总体上能得到很好的再现。这表明VEELS是一种可靠获取物理性质的相关技术,并且在需要高空间分辨率时可以成为传统技术的成功替代方法。