Yukihara Eduardo G, McKeever Stephen W S
Department of Physics, Oklahoma State University, Stillwater, OK 74078, USA.
Radiat Prot Dosimetry. 2006;119(1-4):206-17. doi: 10.1093/rpd/nci591. Epub 2006 Apr 3.
This paper presents an overview of recent results on ionisation density dependence of the thermally stimulated luminescence (TL) and optically stimulated luminescence (OSL) signals from Al2O3:C, with emphasis on the sensitivity, efficiency, shape of the TL/OSL curves and the emission spectrum. High-ionisation densities are created uniformly by accumulated high doses of low-linear energy transfer radiation (gamma, beta, X rays) or non-uniformly in heavy charged particle tracks, even at low fluences, as in the case of space radiation fields. Significant deep trap filling, which occurs at these high-ionisation densities, ultimately results in changes in the concentration of recombination centres (F+-centres) and, consequently, in sensitivity changes and other effects. An OSL emission band at 335 nm has been observed in addition to the main F-centre luminescence band, and the relative intensities of these bands have been observed to be dependent on the ionisation density. The implications of these results and open issues are discussed.
本文概述了近期关于Al2O3:C热释光（TL）和光释光（OSL）信号的电离密度依赖性的研究成果，重点关注TL/OSL曲线的灵敏度、效率、形状以及发射光谱。高电离密度可通过累积高剂量的低线能量转移辐射（γ射线、β射线、X射线）均匀产生，或在重带电粒子径迹中即使在低注量情况下也能非均匀产生，如空间辐射场的情况。在这些高电离密度下发生的显著的深陷阱填充，最终导致复合中心（F + 中心）浓度的变化，进而引起灵敏度变化和其他效应。除了主要的F中心发光带外，还观察到一个335nm的OSL发射带，并且已观察到这些带的相对强度取决于电离密度。讨论了这些结果的意义和未解决的问题。
