Chauveau N, Morucci J P, Franceries X, Celsis P, Rigaud B
Institut National de la Santé et de la Recherche Médicale, Toulouse, France.
Med Biol Eng Comput. 2005 Nov;43(6):694-702. doi: 10.1007/BF02430945.
A resistor mesh model (RMM) has been implemented to describe the electrical properties of the head and the configuration of the intracerebral current sources by simulation of forward and inverse problems in electroencephalogram/event related potential (EEG/ERP) studies. For this study, the RMM representing the three basic tissues of the human head (brain, skull and scalp) was superimposed on a spherical volume mimicking the head volume: it included 43 102 resistances and 14 123 nodes. The validation was performed with reference to the analytical model by consideration of a set of four dipoles close to the cortex. Using the RMM and the chosen dipoles, four distinct families of interpolation technique (nearest neighbour, polynomial, splines and lead fields) were tested and compared so that the scalp potentials could be recovered from the electrode potentials. The 3D spline interpolation and the inverse forward technique (IFT) gave the best results. The IFT is very easy to use when the lead-field matrix between scalp electrodes and cortex nodes has been calculated. By simple application of the Moore-Penrose pseudo inverse matrix to the electrode cap potentials, a set of current sources on the cortex is obtained. Then, the forward problem using these cortex sources renders all the scalp potentials.
已实现一种电阻网格模型(RMM),通过模拟脑电图/事件相关电位(EEG/ERP)研究中的正问题和逆问题,来描述头部的电学特性以及脑内电流源的配置。在本研究中,将代表人类头部三种基本组织(大脑、颅骨和头皮)的RMM叠加在一个模拟头部体积的球形容积上:它包括43102个电阻和14123个节点。通过考虑一组靠近皮质的四个偶极子,参照解析模型进行了验证。使用RMM和选定的偶极子,测试并比较了四种不同的插值技术族(最近邻、多项式、样条和导联场),以便从电极电位恢复头皮电位。三维样条插值和逆正技术(IFT)给出了最佳结果。当计算出头皮电极和皮质节点之间的导联场矩阵时,IFT非常易于使用。通过将摩尔-彭罗斯伪逆矩阵简单应用于电极帽电位,可获得皮质上的一组电流源。然后,使用这些皮质源的正问题可得出所有头皮电位。