Hoffmann Samuel, Utke Ivo, Moser Benedikt, Michler Johann, Christiansen Silke H, Schmidt Volker, Senz Stephan, Werner Peter, Gösele Ulrich, Ballif Christophe
EMPA Materials Science and Technology, Feuerwerkerstrasse 39, 3602 Thun, Switzerland.
Nano Lett. 2006 Apr;6(4):622-5. doi: 10.1021/nl052223z.
The fracture strength of silicon nanowires grown on a [111] silicon substrate by the vapor-liquid-solid process was measured. The nanowires, with diameters between 100 and 200 nm and a typical length of 2 microm, were subjected to bending tests using an atomic force microscopy setup inside a scanning electron microscope. The average strength calculated from the maximum nanowire deflection before fracture was around 12 GPa, which is 6% of the Young's modulus of silicon along the nanowire direction. This value is close to the theoretical fracture strength, which indicates that surface or volume defects, if present, play only a minor role in fracture initiation.
测量了通过气-液-固工艺在[111]硅衬底上生长的硅纳米线的断裂强度。这些纳米线的直径在100至200纳米之间，典型长度为2微米，在扫描电子显微镜内使用原子力显微镜装置对其进行弯曲测试。根据断裂前纳米线的最大挠度计算出的平均强度约为12吉帕，这是硅沿纳米线方向杨氏模量的6%。该值接近理论断裂强度，这表明如果存在表面或体积缺陷，它们在断裂起始中仅起次要作用。
