Wang Xudong, Song Jinhui, Summers Christopher J, Ryou Jae Hyun, Li Peng, Dupuis Russell D, Wang Zhong L
School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA 30332, USA.
J Phys Chem B. 2006 Apr 20;110(15):7720-4. doi: 10.1021/jp060346h.
An effective, low cost, simple, and mask-free pathway is demonstrated for achieving density control of the aligned ZnO nanowires grown for large-scale applications. By a slight variation of the thickness of the thermally evaporated gold catalyst film, a significant change in the density of aligned ZnO nanowires has been controlled. The growth processes of the nanowires on an Al(0.5)Ga(0.5)N substrate has been studied based on the wetting behavior of gold catalyst with or without source vapor, and the results classify the growth processes into three categories: separated dots initiated growth, continuous layer initiated growth, and scattered particle initiated growth. This study presents an approach for growing aligned nanowire arrays on a ceramic substrate with the simultaneous formation of a continuous conducting electrode at the roots, which is important for device applications, such as field emission.
展示了一种有效、低成本、简单且无需掩膜的途径，用于实现大规模应用中生长的取向氧化锌纳米线的密度控制。通过略微改变热蒸发金催化剂膜的厚度，已实现对取向氧化锌纳米线密度的显著控制。基于金催化剂在有无源蒸汽情况下的润湿行为，研究了纳米线在Al(0.5)Ga(0.5)N衬底上的生长过程，结果将生长过程分为三类：分离点起始生长、连续层起始生长和散射颗粒起始生长。本研究提出了一种在陶瓷衬底上生长取向纳米线阵列的方法，同时在根部形成连续的导电电极，这对于诸如场发射等器件应用非常重要。
