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ZnO/ZnSe 核壳纳米棒阵列光电极对 PbS 量子点敏化太阳能电池性能的影响

The effect of ZnO/ZnSe core/shell nanorod arrays photoelectrodes on PbS quantum dot sensitized solar cell performance.

作者信息

Kamruzzaman M

机构信息

Department of Physics, Begum Rokeya University, Rangpur Rangpur-5400 Bangladesh

出版信息

Nanoscale Adv. 2019 Nov 14;2(1):286-295. doi: 10.1039/c9na00523d. eCollection 2020 Jan 22.

DOI:10.1039/c9na00523d
PMID:36133990
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC9416973/
Abstract

ZnO nanorod (NR) based inorganic quantum dot sensitized solar cells have gained tremendous attention for use in next generation solar cells. ZnO/ZnSe-core/shell NR arrays (NRAs) with various densities were grown on an Au@ZnO seed layer (Au = 0.0, 4.0, 8.0 and 16.0 nm) on glass supported fluorine-doped tin oxide (FTO) substrates using low cost hydrothermal and ion-exchange approaches. PbS quantum dots (QDs) were loaded into the ZnO/ZnSe core/shell NRAs a successive ionic layer adsorption and reaction (SILAR) method. The morphology, structural and optical properties of the core/shell NRAs were investigated using field emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM), X-ray diffraction (XRD) and UV-vis spectroscopy measurements. It was observed that the density of the ZnO/ZnSe NRAs decreases with increasing Au buffer layer thickness. The absorption decreases along with a decrease in the ZnO/ZnSe NRA density. The ZnO NRs/PbS QD photoelectrode performs poorly; however, after introducing a ZnSe shell on the core-ZnO, the solar cells parameters changed according to the ZnO/ZnSe NRA density. Values of = ∼0.88%, = 14.60 mA cm, and = 190 mV, and = ∼0.25%, = 6.77 mA cm, and = 115 mV were obtained for the highest and lowest NRA densities, respectively. Although the photovoltaic performance of these photoelectrodes is still inferior, further improvement of the device would be possible by suppressing surface defects, and through quality optimization of the ZnO/ZnSe NRAs, PbS QDs, counter electrode and electrolyte.

摘要

基于氧化锌纳米棒(NR)的无机量子点敏化太阳能电池在下一代太阳能电池的应用中受到了极大关注。采用低成本的水热法和离子交换法,在玻璃支撑的氟掺杂氧化锡(FTO)衬底上的金@氧化锌种子层(金的厚度分别为0.0、4.0、8.0和16.0纳米)上生长了不同密度的氧化锌/硒化锌核壳纳米棒阵列(NRA)。通过连续离子层吸附和反应(SILAR)方法将硫化铅量子点(QD)负载到氧化锌/硒化锌核壳纳米棒阵列中。使用场发射扫描电子显微镜(FE-SEM)、透射电子显微镜(TEM)、X射线衍射(XRD)和紫外可见光谱测量对核壳纳米棒阵列的形貌、结构和光学性质进行了研究。观察到氧化锌/硒化锌纳米棒阵列的密度随着金缓冲层厚度的增加而降低。吸收随着氧化锌/硒化锌纳米棒阵列密度的降低而减小。氧化锌纳米棒/硫化铅量子点光电极性能较差;然而,在氧化锌核上引入硒化锌壳层后,太阳能电池参数根据氧化锌/硒化锌纳米棒阵列密度而变化。对于最高和最低的纳米棒阵列密度,分别获得了开路电压约为0.88%、短路电流密度为14.60毫安/平方厘米、填充因子为190毫伏,以及开路电压约为0.25%、短路电流密度为6.77毫安/平方厘米、填充因子为115毫伏的值。尽管这些光电极的光伏性能仍然较差,但通过抑制表面缺陷以及优化氧化锌/硒化锌纳米棒阵列、硫化铅量子点、对电极和电解质的质量,有可能进一步改进该器件。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/27ac/9416973/fd3a0df3ffd5/c9na00523d-f6.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/27ac/9416973/625062efb0bb/c9na00523d-f1.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/27ac/9416973/967291727481/c9na00523d-f2.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/27ac/9416973/1efa0ceaa95c/c9na00523d-f3.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/27ac/9416973/9b353d607e8b/c9na00523d-f4.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/27ac/9416973/525b019a9169/c9na00523d-f5.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/27ac/9416973/fd3a0df3ffd5/c9na00523d-f6.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/27ac/9416973/625062efb0bb/c9na00523d-f1.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/27ac/9416973/967291727481/c9na00523d-f2.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/27ac/9416973/1efa0ceaa95c/c9na00523d-f3.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/27ac/9416973/9b353d607e8b/c9na00523d-f4.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/27ac/9416973/525b019a9169/c9na00523d-f5.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/27ac/9416973/fd3a0df3ffd5/c9na00523d-f6.jpg

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