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硫化锌薄膜的电化学诱导逐原子生长:一种硫化锌共沉积的新方法。

Electrochemically induced atom-by-atom growth of ZnS thin films: a new approach for ZnS co-deposition.

作者信息

Oznülüer Tuba, Erdogan Ibrahim, Demir Umit

机构信息

Department of Chemistry, Arts and Sciences Faculty, Atatürk University, 25240 Erzurum, Turkey.

出版信息

Langmuir. 2006 Apr 25;22(9):4415-9. doi: 10.1021/la052404g.

Abstract

Ultrathin films of ZnS were grown on Au (111) substrates using a novel, simple co-deposition method and characterized using X-ray diffraction (XRD), atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), and UV-visible spectroscopy. Cyclic voltammograms were used to determine approximate deposition potentials for co-deposition. XRD shows that the material growth is highly preferential with (111) orientation. Both AFM and XRD data indicate that the ZnS growth mechanism starts by the formation of rounded nanoparticles at the surface and then continues by lateral and vertical growth to form flat square crystallites of ZnS. UV-vis spectra taken for the ZnS thin films with various thicknesses, which is related to deposition time, shows that the band gap of the ZnS decreases as the film thickness increases.

摘要

采用一种新颖、简单的共沉积方法在金(111)衬底上生长硫化锌超薄膜,并使用X射线衍射(XRD)、原子力显微镜(AFM)、X射线光电子能谱(XPS)和紫外可见光谱对其进行表征。循环伏安图用于确定共沉积的近似沉积电位。XRD表明材料生长具有高度的(111)取向择优性。AFM和XRD数据均表明,硫化锌的生长机制始于表面形成圆形纳米颗粒,然后通过横向和纵向生长继续形成硫化锌的扁平方形微晶。对与沉积时间相关的不同厚度硫化锌薄膜进行的紫外可见光谱显示,随着薄膜厚度的增加,硫化锌的带隙减小。

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