Burgess Ian, Seivewright Brian, Lennox R Bruce
Department of Chemistry and Centre for Self-Assembled Chemical Structures, McGill University, 801 Sherbrooke Street W, Montreal, QC, H3A 2K6, Canada.
Langmuir. 2006 Apr 25;22(9):4420-8. doi: 10.1021/la052767g.
Using electrochemical impedance spectroscopy (EIS), we provide an explanation for the pH dependence of the voltammetric peak height for the electric-field-driven protonation and deprotonation of carboxylic acid-terminated thiol self-assembled monolayers (SAMs). The current flowing through the interface can be divided into a purely capacitive current and a protonation/deprotonation current that is directly related to the rate of change of the SAM's protonation (or deprotonation). We demonstrate that at applied potentials close to those corresponding to half-ionization of the SAM and pHs near the pK(1/2), the equivalent circuit describing the interface consists of a Helmholtz film capacity in parallel with a "protonation/deprotonation" impedance which is further shown to be a series combination of a resistor, Rp, and capacitor Cp. Explicit expressions for Rp and Cp are derived in terms of the rate constants for the forward (protonation) and reverse (deprotonation) reactions. Simulated EIS data demonstrate the agreement between our model of the interface and experimental impedance and voltammetric data.
利用电化学阻抗谱(EIS),我们对电场驱动的羧酸端基硫醇自组装单分子层(SAMs)的质子化和去质子化伏安峰高度的pH依赖性给出了解释。流经界面的电流可分为纯电容电流和与SAM质子化(或去质子化)变化率直接相关的质子化/去质子化电流。我们证明,在接近SAM半电离对应的外加电位以及接近pK(1/2)的pH值下,描述该界面的等效电路由一个亥姆霍兹膜电容与一个“质子化/去质子化”阻抗并联组成,该阻抗进一步被证明是一个电阻Rp和电容Cp的串联组合。根据正向(质子化)和反向(去质子化)反应的速率常数推导出了Rp和Cp的显式表达式。模拟的EIS数据表明我们的界面模型与实验阻抗和伏安数据之间具有一致性。