Zhang Zengxing, Yuan Huajun, Zhou Jianjun, Liu Dongfang, Luo Shudong, Miao Yanming, Gao Yan, Wang Jianxiong, Liu Lifeng, Song Li, Xiang Yanjuan, Zhao Xiaowei, Zhou Weiya, Xie Sishen
Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Graduate School of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100080, P. R. China.
J Phys Chem B. 2006 May 4;110(17):8566-9. doi: 10.1021/jp0568632.
ZnO nanoneedle arrays have been grown on a large scale with a chemical vapor deposition method at 680 degrees C. Zn powder and O(2) gas are employed as source materials, and catalyst-free Si plates are used as substrates. Energy-dispersive X-ray and X-ray diffraction analyses show that the nanoneedles are almost pure ZnO and preferentially aligned in the c-axis direction of the wurtzite structure. The growth mechanism of ZnO nanoneedle arrays is discussed with the thermodynamic theory and concluded to be the result of the co-effect of the surface tension and diffusion. Photoluminescence spectrum of the as-grown products shows a strong emission band centering at about 484 nm, which originates from oxygen vacancies. Field-emission examination exhibits that the ZnO nanoneedle arrays have a turn-on voltage at about 5.3 V/microm.
采用化学气相沉积法在680摄氏度下大规模生长了氧化锌纳米针阵列。以锌粉和氧气作为源材料，使用无催化剂的硅片作为衬底。能量色散X射线和X射线衍射分析表明，纳米针几乎是纯氧化锌，且优先沿纤锌矿结构的c轴方向排列。用热力学理论讨论了氧化锌纳米针阵列的生长机理，得出其是表面张力和扩散共同作用的结果。生长产物的光致发光光谱显示出一个以约484纳米为中心的强发射带，其源于氧空位。场发射测试表明，氧化锌纳米针阵列的开启电压约为5.3伏/微米。
