Han Xinhai, Wang Guanzhong, Jie Jiansheng, Choy Wallace C H, Luo Yi, Yuk T I, Hou J G
Hefei National Laboratory for Physical Sciences at Microscale, and Department of Physics, University of Science and Technology of China, Hefei 230026, China.
J Phys Chem B. 2005 Feb 24;109(7):2733-8. doi: 10.1021/jp0475943.
Novel ZnO cone arrays with controllable morphologies have been synthesized on silicon (100) substrates by thermal evaporation of metal Zn powder at a low temperature of 570 degrees C without a metal catalyst. Clear structure evolutions were observed using scanning electron microscopy: well-aligned ZnO nanocones, double-cones with growing head cones attached by stem cones, and cones with straight hexagonal pillar were obtained as the distance between the source and the substrates was increased. X-ray diffraction shows that all cone arrays grow along the c-axis. Raman and photoluminescence spectra reveal that the optical properties of the buffer layer between the ZnO cone arrays and the silicon substrates are better than those of the ZnO cone arrays due to high concentration of Zn in the heads of the ZnO cone arrays and higher growth temperature of the buffer layer. The growth of ZnO arrays reveals that the cone arrays are synthesized through a self-catalyzed vapor-liquid-solid (VLS) process.
通过在570摄氏度的低温下热蒸发金属锌粉,在没有金属催化剂的情况下,在硅(100)衬底上合成了具有可控形貌的新型氧化锌锥形阵列。使用扫描电子显微镜观察到了清晰的结构演变:随着源与衬底之间距离的增加,获得了排列良好的氧化锌纳米锥、头部锥通过茎锥连接生长的双锥以及具有直六方柱的锥。X射线衍射表明所有锥形阵列均沿c轴生长。拉曼光谱和光致发光光谱表明,由于氧化锌锥形阵列头部的锌浓度高以及缓冲层的生长温度较高,氧化锌锥形阵列与硅衬底之间的缓冲层的光学性能优于氧化锌锥形阵列。氧化锌阵列的生长表明锥形阵列是通过自催化气-液-固(VLS)过程合成的。