Bode M, Vedmedenko E Y, von Bergmann K, Kubetzka A, Ferriani P, Heinze S, Wiesendanger R
Institute of Applied Physics and Microstructure Research Center, University of Hamburg, Jungiusstrasse 11, 20355 Hamburg, Germany.
Nat Mater. 2006 Jun;5(6):477-81. doi: 10.1038/nmat1646. Epub 2006 May 7.
The search for uncompensated magnetic moments on antiferromagnetic surfaces is of great technological importance as they are responsible for the exchange-bias effect that is widely used in state-of-the-art magnetic storage devices. We have studied the atomic spin structure of phase domain walls in the antiferromagnetic Fe monolayer on W(001) by means of spin-polarized scanning tunnelling microscopy and Monte Carlo simulations. The domain wall width only amounts to 6-8 atomic rows. Although walls oriented along <100> directions are found to be fully compensated, detailed analysis of <110>-oriented walls reveals an uncompensated perpendicular magnetic moment. Our result represents a major advance in the field of antiferromagnetism, and may lead to a better understanding of the magnetic interaction between ferromagnetic and antiferromagnetic materials.
在反铁磁表面寻找未补偿的磁矩具有重大的技术意义，因为它们导致了交换偏置效应，该效应在先进的磁存储设备中被广泛应用。我们通过自旋极化扫描隧道显微镜和蒙特卡罗模拟研究了W(001)上反铁磁铁单层中相畴壁的原子自旋结构。畴壁宽度仅为6 - 8个原子行。虽然发现沿<100>方向取向的壁是完全补偿的，但对<110>取向壁的详细分析揭示了一个未补偿的垂直磁矩。我们的结果代表了反铁磁领域的一项重大进展，并可能有助于更好地理解铁磁和反铁磁材料之间的磁相互作用。
