Kézsmárki I, Mihály G, Gaál R, Barisić N, Akrap A, Berger H, Forró L, Homes C C, Mihály L
Electron Transport Research Group of the Hungarian Academy of Science and Department of Physics, Budapest University of Technology and Economics, 1111 Budapest, Hungary.
Phys Rev Lett. 2006 May 12;96(18):186402. doi: 10.1103/PhysRevLett.96.186402. Epub 2006 May 11.
The correlation-driven metal-insulator transition (MIT) of BaVS(3) was studied by polarized infrared spectroscopy. In the metallic state two types of electrons coexist at the Fermi energy: the quasi-1D metallic transport of A(1g) electrons is superimposed on the isotropic hopping conduction of localized E(g) electrons. The "bad-metal" character and the weak anisotropy are the consequences of the large effective mass m(eff) approximately 7 m(e) and scattering rate Gamma > or = 160 meV of the quasiparticles in the A(1g) band. There is a pseudogap above T(MI) = 69 K, and in the insulating phase the gap follows the BCS-like temperature dependence of the structural order parameter with Delta(ch) approximately 42 meV in the ground state. The MIT is described in terms of a weakly coupled two-band model.
通过偏振红外光谱研究了BaVS(3)的关联驱动金属-绝缘体转变(MIT)。在金属态下,费米能处共存两种类型的电子:A(1g)电子的准一维金属输运叠加在局域E(g)电子的各向同性跳跃传导上。“不良金属”特性和弱各向异性是A(1g)能带中准粒子的大有效质量m(eff)约为7m(e)以及散射率Gamma≥160meV的结果。在T(MI)=69K以上存在一个赝能隙,在绝缘相中,能隙遵循结构序参量的类似BCS的温度依赖性,基态下Delta(ch)约为42meV。MIT用弱耦合双带模型来描述。