Huo H B, Dai L, Xia D Y, Ran G Z, You L P, Zhang B R, Qin G G
School of Physics, Peking University, Beijing, P R China.
J Nanosci Nanotechnol. 2006 Apr;6(4):1182-4. doi: 10.1166/jnn.2006.179.
Single-crystalline ZnTe nanowires with the zincblende structure have been synthesized on silicon (Si) substrates via a vapor phase transport method. The ZnTe (99.99%) powders were used as the source, and 10 nm-thick thermal evaporated gold (Au) film was used as the catalyst. The as-prepared ZnTe nanowires have diameters of 30-80 nm and lengths of more than 10 microm. The products were analyzed by X-ray diffraction, field emission scanning electron microscopy, and high-resolution transmission electron microscopy. Optical properties of these nanowires were investigated by room-temperature Raman scattering spectrum and temperature-dependent photoluminescence measurements. The results show that the as-prepared ZnTe nanowires are of high crystal quality.
通过气相传输法在硅(Si)衬底上合成了具有闪锌矿结构的单晶ZnTe纳米线。使用ZnTe(99.99%)粉末作为源材料,并使用10纳米厚的热蒸发金(Au)膜作为催化剂。所制备的ZnTe纳米线直径为30 - 80纳米,长度超过10微米。通过X射线衍射、场发射扫描电子显微镜和高分辨率透射电子显微镜对产物进行了分析。通过室温拉曼散射光谱和变温光致发光测量研究了这些纳米线的光学性质。结果表明,所制备的ZnTe纳米线具有高晶体质量。