Cao Y L, Liu Z T, Chen L M, Tang Y B, Luo L B, Jie J S, Zhang W J, Lee S T, Lee C S
Center of Super-Diamond and Advanced Films (COSDAF) and Department of Physics and Materials Science, City University of Hong Kong, Hong Kong SAR, China.
Opt Express. 2011 Mar 28;19(7):6100-8. doi: 10.1364/OE.19.006100.
Single-crystalline ZnTe nanowires were prepared by a simple vapor transport and deposition method. Photodetectors of individual ZnTe nanowires were fabricated to study photoconductivity of the nanowires. It was observed the nanowire photodetectors show the highest visible-light photoconductive gains among all reported photodetectors based on 1D nanostructure semiconductors, including CdS, CdSe, ZnSe, etc. The high photosensitivity and relatively fast response speed are attributable to the high crystal quality of the ZnTe nanowires. These results reveal that such single-crystalline ZnTe nanowires are excellent candidates for optoelectronic applications.
通过一种简单的气相输运和沉积方法制备了单晶ZnTe纳米线。制备了单个ZnTe纳米线的光电探测器以研究纳米线的光电导性。据观察，在所有报道的基于一维纳米结构半导体（包括CdS、CdSe、ZnSe等）的光电探测器中，纳米线光电探测器展现出最高的可见光光电导增益。高灵敏度和相对较快的响应速度归因于ZnTe纳米线的高质量晶体。这些结果表明，这种单晶ZnTe纳米线是光电子应用的极佳候选材料。
