具有均匀生长前沿的电沉积碲化铋纳米线阵列。

Electrodeposited bismuth telluride nanowire arrays with uniform growth fronts.

作者信息

Trahey Lynn, Becker Catherine R, Stacy Angelica M

机构信息

Department of Chemistry, University of California, Berkeley, California 94720, USA.

出版信息

Nano Lett. 2007 Aug;7(8):2535-9. doi: 10.1021/nl070711w. Epub 2007 Jul 13.

DOI:10.1021/nl070711w

PMID:17629346

Abstract

Bismuth telluride (Bi2Te3) nanowires were deposited into porous alumina templates with 35 nm diameter pores by a pulsed-potential electrodeposition method. For growth at temperatures between 1 and 4 degrees C, the nanowires filled 93% of the pores of the template, and the growth fronts were uniform with nanowire lengths of approximately 62-68 microm. There are over ten billion nanowires per square centimeter with aspect ratios approaching 2000:1. Samples were characterized by scanning and transmission electron microscopy, X-ray diffraction, and electron microprobe analysis. The crystalline nanowire arrays are highly oriented in the [110] direction, which is optimal for thermoelectric applications.

摘要

通过脉冲电位电沉积法将碲化铋（Bi2Te3）纳米线沉积到孔径为35纳米的多孔氧化铝模板中。在1至4摄氏度的温度下生长时，纳米线填充了模板93%的孔隙，生长前沿均匀，纳米线长度约为62 - 68微米。每平方厘米有超过100亿根纳米线，纵横比接近2000:1。通过扫描和透射电子显微镜、X射线衍射和电子微探针分析对样品进行了表征。晶体纳米线阵列在[110]方向上高度取向，这对于热电应用是最佳的。