Yoshikawa Masanobu, Murakami Masataka
Toray Research Center Inc., Sonoyama 3-3-7, Otsu, Shiga 520-8567, Japan.
Appl Spectrosc. 2006 May;60(5):479-82. doi: 10.1366/000370206777412130.
We have developed a tapping-mode scanning near-field optical Raman microscope (SNORM) with a caved and pyramidical probe, using resonant Raman scattering, and have measured the stress distribution of Si. The peak frequency shifts to a lower frequency by 0-0.5 cm(-1) in the area covered by silicon dioxide, whereas it shifts to a higher frequency by 0-0.3 cm(-1) in the area uncovered by silicon dioxide, showing that the areas covered and uncovered by silicon dioxide are under tensile and compressive stresses, respectively. It has been found that compressive stresses of about 0.69 GPa/cm2 are concentrated on the corner of the area uncovered by silicon dioxide. The comparison of stress distributions measured with and without the cantilever shows that the SNORM we developed has a spatial resolution of at least less than 250 nm.
我们利用共振拉曼散射，开发了一种带有凹陷金字塔形探针的轻敲模式扫描近场光学拉曼显微镜（SNORM），并测量了硅的应力分布。在二氧化硅覆盖区域，峰值频率向低频移动0 - 0.5 cm⁻¹，而在二氧化硅未覆盖区域，峰值频率向高频移动0 - 0.3 cm⁻¹，这表明二氧化硅覆盖和未覆盖区域分别处于拉伸应力和压缩应力之下。已发现约0.69 GPa/cm²的压缩应力集中在二氧化硅未覆盖区域的角落。有无悬臂时测量的应力分布比较表明，我们开发的SNORM具有至少小于250 nm的空间分辨率。
