Adsorption reactions of dimethylaluminum isopropoxide and water on the H/Si(100)-2 x 1 surface: initial reactions for atomic layer deposition of Al2O3.

The surface reaction pathways of dimethylaluminum isopropoxide (DMAI) and water with the H/Si(100)-2 x 1 surface were theoretically investigated with SIMOMM:MP2/6-31G(d). The oxygen atom in DMAI stabilizes an initial complex, facilitating the approach of DMAI to the surface. The methane loss reaction, propane loss reaction, methylation, hydrogen loss reaction, and ring closing reaction channels of the DMAI-surface reactions were identified. Among these, the methane loss reaction depositing -Al(CH3)OCH(CH3)2 was found to be the major channel due to low barrier height and large exothermicity. The ring closing reaction is kinetically the second most accessible channel, even though it is not thermodynamically favorable. On the basis of these theoretical results, recent experimental data were reinterpreted such that the experimentally observed peaks of CH4 and CH(CH3)2OH are in fact the products of these two channels. The propane loss reaction is kinetically the third most probable channel. It produces the surface Si-O bond, which is a reaction unique to DMAI as compared to trimethylaluminum. In summary, the oxygen substitution not only affects the basic nature of the existing potential energy surfaces but also opens new possibilities.