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半导体纳米晶体中的自净化

Self-purification in semiconductor nanocrystals.

作者信息

Dalpian Gustavo M, Chelikowsky James R

机构信息

Center for Computational Materials, Institute for Computational Engineering and Sciences, Department of Physics, University of Texas, Austin, Texas 78712, USA.

出版信息

Phys Rev Lett. 2006 Jun 9;96(22):226802. doi: 10.1103/PhysRevLett.96.226802. Epub 2006 Jun 6.

Abstract

Doping of nanocrystals is an important and very difficult task. "Self-purification" mechanisms are often claimed to make this task even more difficult, as the distance a defect or impurity must move to reach the surface of a nanocrystal is very small. We show that self-purification can be explained through energetic arguments and is an intrinsic property of defects in semiconductor nanocrystals. We find the formation energies of defects increases as the size of the nanocrystal decreases. We analyze the case of Mn-doped CdSe nanocrystals and compare our results to experimental findings.

摘要

纳米晶体的掺杂是一项重要且极具挑战性的任务。人们常称“自净化”机制会使这项任务变得更加困难,因为缺陷或杂质到达纳米晶体表面所需移动的距离非常小。我们表明,自净化可以通过能量论据来解释,并且是半导体纳米晶体中缺陷的固有属性。我们发现,随着纳米晶体尺寸的减小,缺陷的形成能会增加。我们分析了锰掺杂硒化镉纳米晶体的情况,并将我们的结果与实验发现进行了比较。

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