Yu Y, Wang R H, Chen Q, Peng L-M
Beijing Laboratory of Electron Microscopy, Institute of Physics, Chinese Academy of Science, Beijing 100080, China.
J Phys Chem B. 2006 Jul 13;110(27):13415-9. doi: 10.1021/jp061599d.
Large-scale ultralong single-crystalline Sb2Se3 and Sb2S3 nanoribbons were prepared respectively by reacting SbCl3 with selenium and sulfur powders in glycol solution. Both Sb2Se3 and Sb2S3 nanoribbons are usually hundreds of microns in length, and the structures of the nanoribbons are determined to be of the orthorhombic phases. The Sb2Se3 nanoribbons are typically 100-300 nm in width and 20-60 nm in thickness and grow along the [12] direction. Sb2S3 nanoribbons are wider than Sb2Se3 nanoribbons; Sb2S3 nanoribbons are about 200-500 nm in width and grow along the [001] direction. The growth mechanism of the nanoribbons is investigated based on high-resolution transmission electron microscopy (HRTEM) observations. Optical absorption experiment reveals that Sb2Se3 and Sb2S3 nanoribbons are two semiconductors with bandwidth Eg approximately 1.15 eV and Eg approximately 1.56 eV, respectively.
通过在乙二醇溶液中使三氯化锑与硒粉和硫粉反应，分别制备了大规模超长单晶 Sb2Se3 和 Sb2S3 纳米带。Sb2Se3 和 Sb2S3 纳米带的长度通常为数百微米，其结构被确定为正交相。Sb2Se3 纳米带的宽度通常为 100 - 300 纳米，厚度为 20 - 60 纳米，并沿 [12] 方向生长。Sb2S3 纳米带比 Sb2Se3 纳米带宽；Sb2S3 纳米带的宽度约为 200 - 500 纳米，并沿 [001] 方向生长。基于高分辨率透射电子显微镜（HRTEM）观察研究了纳米带的生长机制。光吸收实验表明，Sb2Se3 和 Sb2S3 纳米带是两种半导体，其带隙 Eg 分别约为 1.15 电子伏特和 1.56 电子伏特。
