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大规模高质量超长 Sb2S3 纳米带。

High-quality ultralong Sb2S3 nanoribbons on large scale.

作者信息

Yu Y, Wang R H, Chen Q, Peng L-M

机构信息

Beijing Laboratory of Electron Microscopy, Institute of Physics, Chinese Academy of Science, Beijing 100080, China.

出版信息

J Phys Chem B. 2005 Dec 15;109(49):23312-5. doi: 10.1021/jp055132z.

Abstract

Large-scale, ultralong, single-crystalline Sb2S3 nanoribbons were prepared by directly reacting SbCl3 and Na2S2O3 solutions, without any organics used in the experiment. The nanoribbons were analyzed by a range of methods. The nanoribbons are usually several millimeters in length, typically 200-500 nm in width and 30-80 nm in thickness. The structure of the nanoribbons is determined to be of the orthorhombic phase. The growth mechanism of the nanoribbons was investigated based on high-resolution transmission electron microscopy observations. Optical absorption experiment shows that the nanoribbon is a semiconductor with a bandwidth Eg approximately 1.5 eV, near to the optimum for photovoltaic conversion, suggesting that Sb2S3 nanoribbons could be used in solar energy and photoelectronic applications.

摘要

通过直接使三氯化锑(SbCl3)溶液和硫代硫酸钠(Na2S2O3)溶液反应制备了大规模、超长的单晶 Sb2S3 纳米带,实验中未使用任何有机物。通过一系列方法对纳米带进行了分析。纳米带通常长度为几毫米,宽度典型为 200 - 500 纳米,厚度为 30 - 80 纳米。确定纳米带的结构为正交相。基于高分辨率透射电子显微镜观察研究了纳米带的生长机制。光吸收实验表明,纳米带是一种带宽 Eg 约为 1.5 电子伏特的半导体,接近光伏转换的最佳值,这表明 Sb2S3 纳米带可用于太阳能和光电子应用。

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