Usta Hakan, Lu Gang, Facchetti Antonio, Marks Tobin J
Department of Chemistry and the Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208, USA.
J Am Chem Soc. 2006 Jul 19;128(28):9034-5. doi: 10.1021/ja062908g.
The synthesis and physicochemical properties of a new class of thiophene/arenesilole-containing pi-conjugated polymers are reported. Examples of this new polymer class include the following: poly(2,5-bis(3',3' '-dihexylsilylene-2',2' '-bithieno)thiophene) (TS6T1), poly(2,5'-bis(3' ',3' ''-dihexylsilylene-2' ',2' ''-bithieno)bithiophene) (TS6T2), poly(2,5'-bis(2' ',2' ''-dioctylsilylene-1' ',1' ''-biphenyl)thiophene) (BS8T1), and poly(2,5'-bis(2' ',2' ''-dioctylsilylene-1' ',1' ''-biphenyl)bithiophene) (BS8T2). Organic field-effect transistors (OFETs) with hole carrier mobilities as high as 0.02-0.06 cm2/V s in air, low turn-on voltages, and current on/off ratios >105-106 are fabricated using solution processing techniques with the above polymers as the active channel layer. OFETs based on this polymer class exhibit excellent ambient operational stability.
报道了一类新型含噻吩/芳基硅芴的π共轭聚合物的合成及其物理化学性质。这类新型聚合物的例子包括:聚(2,5-双(3',3''-二己基硅撑-2',2''-联噻吩)噻吩)(TS6T1)、聚(2,5'-双(3'',3''' -二己基硅撑-2'',2''' -联噻吩)联噻吩)(TS6T2)、聚(2,5'-双(2'',2''' -二辛基硅撑-1'',1''' -联苯)噻吩)(BS8T1)和聚(2,5'-双(2'',2''' -二辛基硅撑-1'',1''' -联苯)联噻吩)(BS8T2)。使用溶液加工技术,以上述聚合物作为有源沟道层,制备了空穴载流子迁移率在空气中高达0.02 - 0.06 cm2/V s、开启电压低且电流开/关比>105 - 106的有机场效应晶体管(OFET)。基于这类聚合物的OFET表现出优异的环境操作稳定性。