基于萘二甲酰亚胺与苝二甲酰亚胺的共聚物。底栅N沟道有机晶体管中的合成及半导体性能
Naphthalenedicarboximide- vs perylenedicarboximide-based copolymers. Synthesis and semiconducting properties in bottom-gate N-channel organic transistors.
作者信息
Chen Zhihua, Zheng Yan, Yan He, Facchetti Antonio
机构信息
Polyera Corporation, 8045 Lamon Avenue, Skokie, Illinois 60077, USA.
出版信息
J Am Chem Soc. 2009 Jan 14;131(1):8-9. doi: 10.1021/ja805407g.
Two new n-channel polymeric semiconductors for organic thin-film transistors (TFTs) based on electron-depleted perylene- (PDI) and naphthalene-dicarboxyimide (NDI) polymerized with dithiophene are reported: poly{[N,N'-bis(2-octyldodecyl)-1,4,5,8-naphthalene dicarboximide-2,6-diyl]-alt-5,5'-(2,2'-bithiophene)}, P(NDI2OD-T2), and poly{[N,N'-bis(2-octyldodecyl)-3,4,9,10-perylenedicarboximide-(1,7&1,6)-diyl]-alt-5,5'-(2,2'-bithiophene)}, P(PDI2OD-T2). Polymer regioregularity and electronic structure strongly depend on the rylene co-monomer. The use of NDI enables a regioregular and high-molecular-weight polymer with greatly stabilized electron transport in ambient. Unoptimized P(NDI2OD-T2)-based TFTs exhibit good electron mobilities [mu(e) approximately 0.04 (0.01) cm(2)/V.s in vacuum (ambient after 16 weeks) vs mu(e) approximately 0.003 (2 x 10(-4)) cm(2)/V.s in vacuum (ambient after 1.5 week) for P(PDI2OD-T2)] and on-off current modulation [I(on):I(off) > 10(6)].
报道了两种用于有机薄膜晶体管（TFT）的新型n沟道聚合物半导体，它们基于与二噻吩聚合的缺电子苝（PDI）和萘二甲酰亚胺（NDI）：聚{[N，N'-双（2-辛基十二烷基）-1,4,5,8-萘二甲酰亚胺-2,6-二基]-alt-5,5'-（2,2'-联噻吩）}，P（NDI2OD-T2），以及聚{[N，N'-双（2-辛基十二烷基）-3,4,9,10-苝二甲酰亚胺-（1,7&1,6）-二基]-alt-5,5'-（2,2'-联噻吩）}，P（PDI2OD-T2）。聚合物的区域规整性和电子结构强烈依赖于苝共聚单体。使用NDI可得到一种区域规整的高分子量聚合物，其在环境中电子传输得到极大稳定。未优化的基于P（NDI2OD-T2）的TFT表现出良好的电子迁移率[在真空中μ(e)约为0.04（0.01）cm²/V·s（16周后在环境中），而基于P（PDI2OD-T2）的TFT在真空中μ(e)约为0.003（2×10⁻⁴）cm²/V·s（1.5周后在环境中）]和开-关电流调制[I(on):I(off)>10⁶]。
Zotero 插件