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水与在NiAl(100)上生长的有序θ-Al₂O₃超薄膜的相互作用。

Interaction of water with ordered theta-Al(2)O(3) ultrathin films grown on NiAl(100).

作者信息

Ozensoy Emrah, Szanyi Janos, Peden Charles H F

机构信息

Interfacial Chemistry and Engineering, Chemical Sciences Division, Pacific Northwest National Laboratory, P.O. Box 999, MSIN K8-93, Richland, Washington 99352, USA.

出版信息

J Phys Chem B. 2005 Mar 3;109(8):3431-6. doi: 10.1021/jp0449206.

Abstract

The structure of an ordered, ultrathin theta-Al(2)O(3) film grown on a NiAl(100) single-crystal surface was studied by Auger electron spectroscopy (AES), X-ray photoelectron spectroscopy (XPS), and low-energy electron diffraction (LEED), and its interaction with water was investigated with temperature programmed desorption (TPD) and XPS. Our results indicate that H(2)O adsorption on the theta-Al(2)O(3)/NiAl(100) surface is predominantly molecular rather than dissociative. For theta(H)()2(O) < 1 ML (ML = monolayer), H(2)O molecules were found to populate Al(3+) cation sites to form isolated H(2)O species aligned in a row along the cation sites on the oxide surface with a repulsive interaction between them. For theta(H)()2(O) > 1 ML, three-dimensional ice multilayers were observed to form, which then desorb during TPD with approximate zero-order kinetics as expected. A small extent of H(2)O dissociation was observed to occur on the theta-Al(2)O(3)/NiAl(100) surface, which was attributed to the presence of a low concentration of oxygen atom vacancies. Titration of these defect sites with adsorbed H(2)O molecules revealed an estimated defect density of 0.05 ML for the theta-Al(2)O(3)/NiAl(100) system consistent with the ordered nature of the synthesized oxide film.

摘要

通过俄歇电子能谱(AES)、X射线光电子能谱(XPS)和低能电子衍射(LEED)研究了在NiAl(100)单晶表面生长的有序超薄θ-Al₂O₃薄膜的结构,并利用程序升温脱附(TPD)和XPS研究了其与水的相互作用。我们的结果表明,H₂O在θ-Al₂O₃/NiAl(100)表面的吸附主要是分子吸附而非解离吸附。对于θ(H₂O) < 1 ML(ML = 单层),发现H₂O分子占据Al³⁺阳离子位点,形成沿氧化物表面阳离子位点排成一排的孤立H₂O物种,它们之间存在排斥相互作用。对于θ(H₂O) > 1 ML,观察到形成了三维冰多层,然后在TPD过程中以预期的近似零级动力学解吸。在θ-Al₂O₃/NiAl(100)表面观察到有少量H₂O解离,这归因于低浓度的氧原子空位的存在。用吸附的H₂O分子滴定这些缺陷位点表明,θ-Al₂O₃/NiAl(100)体系的缺陷密度估计为0.05 ML,这与合成氧化膜的有序性质一致。

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