Bae Seung Yong, Seo Hee Won, Choi Hyun Chul, Han Doo Suk, Park Jeunghee
Department of Chemistry, Korea University, Jochiwon 339-700, S. Korea.
J Phys Chem B. 2005 May 5;109(17):8496-502. doi: 10.1021/jp046501e.
Coaxial nanocables of gallium phosphide (GaP) core with three different-typed single and double shells (i.e., silicon oxide (SiO(x)), carbon (C), and SiO(x)/C) were exclusively synthesized by the chemical vapor deposition method. The GaP/SiO(x)) nanocables were directly grown on gold-deposited silicon substrates. Deposition of C on the GaP nanowires and GaP/SiO(x) nanocables produces the GaP/C and GaP/SiO(x)/C nanocables, respectively. The outer diameter of the nanocables is <50 nm. The thickness and crystallinity of the C outer layers were controllable by the growth conditions. X-ray photoelectron spectroscopy, X-ray diffraction, Raman spectroscopy, and photoluminescence reveal that the outer layer formation reduces the surface defects of GaP nanowires. A great enhancement of the conductivity due to the C outer layers has been measured by the four-probe method. The growth process of these nanocables has been discussed on the basis of the vapor-liquid-solid mechanism.
采用化学气相沉积法专门合成了具有三种不同类型单壳层和双壳层（即氧化硅（SiO(x)）、碳（C）以及SiO(x)/C）的磷化镓（GaP）芯同轴纳米电缆。GaP/SiO(x)纳米电缆直接生长在镀有金的硅衬底上。在GaP纳米线和GaP/SiO(x)纳米电缆上沉积C分别得到GaP/C和GaP/SiO(x)/C纳米电缆。纳米电缆的外径<50 nm。C外层的厚度和结晶度可通过生长条件进行控制。X射线光电子能谱、X射线衍射、拉曼光谱和光致发光表明，外层的形成减少了GaP纳米线的表面缺陷。通过四探针法测量发现，由于C外层，导电性有了很大提高。基于气-液-固机制对这些纳米电缆的生长过程进行了讨论。
