Cai K F, Huang L Y, Zhang A X, Yin J L, Liu H
Tongji University, Functional Materials Research Laboratory, 1239 Siping Road, Shanghai 200092, China.
J Nanosci Nanotechnol. 2008 Dec;8(12):6338-43.
SiCN nanowires are synthesized by pyrolysis of hexamethyldisilazane (HMDSN) using ferrocene as a catalyst precursor at 1200 degrees C in a flowing argon atmosphere on the surface of mullite substrate, polycrystalline alumina wafer and quartz tube. In oxygen-contained argon atmosphere, SiCN/SiO2 nanocables are synthesized. The as-synthesized products are characterized by X-ray diffraction, scanning electron microscopy, transmission electron microscopy and high-resolution electron microscopy equipped with energy dispersive X-ray spectroscopy. The lengths of the nanowires and nanocables are in the millimeter range. The diameter of the SiCN nanowires grown on mullite substrate and alumina wafer ranges from about 10-70 nm, while that of the nanowires grown on quartz tube surface is in the range of around 7-10 nm. The diameters of the SiCN/SiO2 nanocables are relatively large. A vapor-liquid-solid growth mechanism of the nanostructures is proposed. The electrical resistivity of a single SiCN/SiO2 nanocable is reported for the first time.
通过在1200摄氏度的流动氩气气氛中，以二茂铁作为催化剂前体，对六甲基二硅氮烷（HMDSN）进行热解，在莫来石衬底、多晶氧化铝晶片和石英管表面合成了SiCN纳米线。在含氧气的氩气气氛中，合成了SiCN/SiO2纳米电缆。采用配备能量色散X射线光谱仪的X射线衍射、扫描电子显微镜、透射电子显微镜和高分辨率电子显微镜对合成产物进行了表征。纳米线和纳米电缆的长度在毫米范围内。生长在莫来石衬底和氧化铝晶片上的SiCN纳米线直径约为10 - 70纳米，而生长在石英管表面的纳米线直径在7 - 10纳米左右。SiCN/SiO2纳米电缆的直径相对较大。提出了纳米结构的气-液-固生长机制。首次报道了单根SiCN/SiO2纳米电缆的电阻率。
