Shieh Felice, Saunders Aaron E, Korgel Brian A
Department of Chemical Engineering, Texas Materials Institute, Center for Nano- and Molecular Science and Technology, University of Texas, Austin, Texas 78712, USA.
J Phys Chem B. 2005 May 12;109(18):8538-42. doi: 10.1021/jp0509008.
We report a general synthetic method for the formation of shape-controlled CdS, CdSe and CdTe nanocrystals and mixed-semiconductor heterostructures. The crystal growth kinetics can be manipulated by changing the injection rate of the chalcogen precursor, allowing the particle shape-spherical or rodlike-to be tuned without changing the underlying chemistry. A single injection of precursor leads to isotropic spherical growth, whereas multiple injections promote epitaxial growth along the length of the c-axis. This method was extended to produce linear type I and type II semiconductor nanocrystal heterostructures.
我们报道了一种用于形成形状可控的硫化镉、硒化镉和碲化镉纳米晶体以及混合半导体异质结构的通用合成方法。通过改变硫族元素前驱体的注入速率，可以控制晶体生长动力学，从而在不改变基础化学组成的情况下调节颗粒形状（球形或棒状）。单次注入前驱体导致各向同性的球形生长，而多次注入则促进沿c轴长度方向的外延生长。该方法被扩展用于制备线性I型和II型半导体纳米晶体异质结构。
