硅衬底上氮掺杂碳纳米管的化学气相沉积生长及其机理。

CVD growth of N-doped carbon nanotubes on silicon substrates and its mechanism.

作者信息

He Maoshuai, Zhou Shuang, Zhang Jin, Liu Zhongfan, Robinson Colin

机构信息

Key Laboratory for the Physics and Chemistry of Nanodevices, Center for Nanoscale Science and Technology (CNST), College of Chemistry & Molecular Engineering, Peking University, Beijing 100871, People's Republic of China.

出版信息

J Phys Chem B. 2005 May 19;109(19):9275-9. doi: 10.1021/jp044868d.

DOI:10.1021/jp044868d

PMID:16852108

Abstract

In the present study, we report the chemical vapor deposition (CVD) of nitrogen-doped (N-doped) aligned carbon nanotubes on a silicon (Si) substrate using ferrocene (Fe(C5H5)2) as catalyst and acetonitrile (CH3CN) as the carbon source. The effect of experimental conditions such as temperature, gaseous environment, and substrates on the structure and morphology of N-doped carbon nanotubes arrays is reported. From XPS and EELS data, it was found that the nitrogen content of the nanotubes could be determined over a wide range, from 1.9% to 12%, by adding the addition of hydrogen (H2) to the reaction system. It was also shown by SEM that N-doped carbon nanotube arrays could be produced on Si and SiO2 substrates at suitable temperatures, although at different growth rates. Using these concentrations, it was possible to produce three-dimensional (3D) carbon nanotubes architectures on predetermined Si/SiO2 patterns. The mechanism underlying the effect of nitrogen containing carbon sources on nanotube formation was explored using X-ray photoelectron spectroscopy (XPS).

摘要

在本研究中，我们报道了以二茂铁（Fe(C5H5)2）为催化剂、乙腈（CH3CN）为碳源，在硅（Si）衬底上通过化学气相沉积（CVD）法制备氮掺杂（N掺杂）的取向碳纳米管。报道了诸如温度、气体环境和衬底等实验条件对N掺杂碳纳米管阵列结构和形貌的影响。通过X射线光电子能谱（XPS）和电子能量损失谱（EELS）数据发现，通过向反应体系中添加氢气（H2），纳米管的氮含量可以在1.9%至12%的宽范围内确定。扫描电子显微镜（SEM）也表明，在合适的温度下，尽管生长速率不同，但在Si和SiO2衬底上都可以制备N掺杂碳纳米管阵列。利用这些浓度，可以在预定的Si/SiO2图案上制备三维（3D）碳纳米管结构。使用X射线光电子能谱（XPS）探索了含氮碳源对纳米管形成影响的潜在机制。