Han Doo Suk, Bae Seung Yong, Seo Hee Won, Kang Young Joo, Park Jeunghee, Lee Gangho, Ahn Jae-Pyoung, Kim Soonkyu, Chang Joonyeon
Department of Chemistry, Korea University, Jochiwon 339-700, Korea.
J Phys Chem B. 2005 May 19;109(19):9311-6. doi: 10.1021/jp050655s.
We characterized the structure and magnetic properties of Mn-incorporated GaP nanowires synthesized by thermal evaporation of GaP/Mn powders. The nanowires consist of twin-crystalline zinc blende GaP grown with the [111] direction and doped with about 1 at. % Mn. They are often sheathed with the bumpy amorphous outerlayers containing high concentrations of Mn and O. The ferromagnetic hysteresis curves at 5 and 300 K and temperature-dependent magnetization provide evidence for the ferromagnetism with the Curie temperature higher than room temperature. Magnetic properties of individual nanowires have been measured, showing a large negative magnetoresistance equal to about -5% at 5 K. We suggest that the Mn doping of GaP nanowires would form a dilute magnetic semiconductor.
我们对通过热蒸发 GaP/Mn 粉末合成的掺锰 GaP 纳米线的结构和磁性进行了表征。这些纳米线由沿 [111] 方向生长且掺杂了约 1 at. % Mn 的双晶闪锌矿 GaP 组成。它们通常被含有高浓度 Mn 和 O 的凹凸不平的非晶外层所包覆。5 K 和 300 K 时的铁磁滞回线以及随温度变化的磁化强度为居里温度高于室温的铁磁性提供了证据。已测量了单个纳米线的磁性，结果表明在 5 K 时具有约 -5% 的大负磁阻。我们认为 GaP 纳米线的 Mn 掺杂会形成一种稀磁半导体。
Zotero 插件