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锰掺杂的 InGaAs 和 GaAsSb 纳米线的室温铁磁性和太赫兹发射。

Room-temperature ferromagnetism and terahertz emission of Mn-doped InGaAs and GaAsSb nanowires.

机构信息

Department of Chemistry, Korea University, Jochiwon, Korea.

出版信息

Nanotechnology. 2010 Oct 29;21(43):435703. doi: 10.1088/0957-4484/21/43/435703. Epub 2010 Sep 29.

Abstract

Ferromagnetic Mn-doped In(0.05)Ga(0.95)As and GaAs(0.95)Sb(0.05) nanowires were synthesized by chemical vapor transport and their Mn concentration was about 2%. The Mn doped homogeneously into both the single-crystalline zinc blende InGaAs and GaAsSb without the formation of metal clusters. X-ray magnetic circular dichroism and magnetic moment measurements revealed their distinctive room-temperature ferromagnetic behaviors. While the incorporation of In enhances the ferromagnetism, that of Sb reduces it, which can be ascribed to the increase or decrease of the dopant-acceptor hybridization. These GaAs-based NWs exhibit an efficient terahertz emission at room temperature, due to a strong local field enhancement by coherent surface plasmons. The Mn doping significantly enhances the intensity and bandwidth of the terahertz emission, with an excellent correlation with their magnetization.

摘要

通过化学气相输运法合成了 Mn 掺杂的铁磁 In(0.05)Ga(0.95)As 和 GaAs(0.95)Sb(0.05)纳米线,其 Mn 浓度约为 2%。Mn 均匀地掺杂到单晶闪锌矿 InGaAs 和 GaAsSb 中,而没有形成金属簇。X 射线磁圆二色性和磁矩测量揭示了它们独特的室温铁磁行为。虽然 In 的掺入增强了铁磁性,但 Sb 的掺入却降低了铁磁性,这可以归因于掺杂-受主杂化的增加或减少。这些基于 GaAs 的 NWs 在室温下表现出有效的太赫兹发射,这是由于相干表面等离激元产生的强局域场增强。Mn 掺杂显著增强了太赫兹发射的强度和带宽,与它们的磁化强度具有极好的相关性。

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