Bae Seung Yong, Na Chan Woong, Kang Ja Hee, Park Jeunghee
Department of Chemistry, Korea University, Jochiwon 339-700, South Korea.
J Phys Chem B. 2005 Feb 24;109(7):2526-31. doi: 10.1021/jp0458708.
ZnO nanowires doped with a high concentration Ga, In, and Sn were synthesized via thermal evaporation. The doping content defined as X/(Zn + X) atomic ratio, where X is the doped element, is about 15% for all nanowires. The nanowires consist of single-crystalline wurtzite ZnO crystal, and the average diameter is 80 nm. The growth direction of vertically aligned Ga-doped nanowires is [001], while that of randomly tilted In- and Sn-doped nanowires is [010]. A correlation between the growth direction and the vertical alignment has been suggested. The broaden X-ray diffraction peaks indicate the lattice distortion caused by the doping, and the broadening is most significant in the case of Sn doping. The absorption and photoluminescence of Sn-doped ZnO nanowires shift to the lower energy region than those of In- and Ga-doped nanowires, probably due to the larger charge density of Sn.
通过热蒸发合成了高浓度掺杂Ga、In和Sn的ZnO纳米线。掺杂含量定义为X/(Zn + X)原子比（其中X为掺杂元素），所有纳米线的该比例约为15%。纳米线由单晶纤锌矿ZnO晶体组成，平均直径为80 nm。垂直排列的Ga掺杂纳米线的生长方向为[001]，而随机倾斜的In和Sn掺杂纳米线的生长方向为[010]。有人提出了生长方向与垂直排列之间的相关性。X射线衍射峰变宽表明掺杂引起了晶格畸变，且这种变宽在Sn掺杂的情况下最为显著。与In和Ga掺杂的纳米线相比，Sn掺杂的ZnO纳米线的吸收和光致发光向较低能量区域移动，这可能是由于Sn的电荷密度较大。
