Na Chan Woong, Bae Seung Yong, Park Jeunghee
Department of Chemistry, Korea University, Jochiwon 339-700, Korea.
J Phys Chem B. 2005 Jul 7;109(26):12785-90. doi: 10.1021/jp0442246.
Two longitudinal superlattice structures of In(2)O(3)(ZnO)(4) and In(2)O(3)(ZnO)(5) nanowires were exclusively produced by a thermal evaporation method. The diameter is periodically modulated in the range of 50-90 nm. The nanowires consist of one In-O layer and five (or six) layered Zn-O slabs stacked alternately perpendicular to the long axis, with a modulation period of 1.65 (or 1.9) nm. These superlattice nanowires were doped with 6-8% Sn. The X-ray diffraction pattern reveals the structural defects of wurtzite ZnO crystals due to the In/Sn incorporation. The high-resolution X-ray photoelectron spectrum suggests that In and Sn withdraw the electrons from Zn and enhance the number of dangling-bond O 2p states, resulting in the reduction of the band gap. Photoluminescence and cathodoluminescence exhibit the peak shift of near band edge emission to the lower energy and the enhancement of green emission as the In/Sn content increases.
通过热蒸发法专门制备了In(2)O(3)(ZnO)(4)和In(2)O(3)(ZnO)(5)纳米线的两种纵向超晶格结构。其直径在50 - 90纳米范围内呈周期性调制。纳米线由一层In - O层和垂直于长轴交替堆叠的五层（或六层）Zn - O板组成，调制周期为1.65（或1.9）纳米。这些超晶格纳米线掺杂了6 - 8%的Sn。X射线衍射图谱揭示了由于In/Sn掺入导致的纤锌矿ZnO晶体的结构缺陷。高分辨率X射线光电子能谱表明，In和Sn从Zn中夺取电子并增加了悬空键O 2p态的数量，导致带隙减小。随着In/Sn含量的增加，光致发光和阴极发光显示出近带边发射峰向低能量方向的移动以及绿色发射的增强。
