Chang Ko-Wei, Wu Jih-Jen
Department of Chemical Engineering, National Cheng Kung University, Tainan, Taiwan.
J Phys Chem B. 2005 Jul 21;109(28):13572-7. doi: 10.1021/jp051925+.
Formation of well-aligned and single-crystalline ZnGa(2)O(4) nanowires on sapphire (0001) substrates has been achieved via annealing of the Ga(2)O(3)/ZnO core-shell nanowires. Ga(2)O(3)/ZnO core-shell nanowires were prepared using a two-step method. The thickness of the original ZnO shell and the thermal budget of the annealing process play crucial roles for preparing single-crystalline ZnGa(2)O(4) nanowires. Structural analyses of the annealed nanowires reveal the existence of an epitaxial relationship between ZnGa(2)O(4) and Ga(2)O(3) phases during the solid-state reaction. A strong CL emission band centered at 360 nm and a small tail at 680 nm are obtained at room temperature from the single-crystalline ZnGa(2)O(4) nanowires.
通过对Ga₂O₃/ZnO核壳纳米线进行退火处理，已在蓝宝石(0001)衬底上实现了排列良好的单晶ZnGa₂O₄纳米线的形成。采用两步法制备了Ga₂O₃/ZnO核壳纳米线。原始ZnO壳的厚度和退火过程的热预算对于制备单晶ZnGa₂O₄纳米线起着至关重要的作用。对退火后的纳米线进行结构分析，揭示了固态反应过程中ZnGa₂O₄和Ga₂O₃相之间存在外延关系。在室温下，从单晶ZnGa₂O₄纳米线中获得了一个以360 nm为中心的强CL发射带和在680 nm处的一个小尾巴。
