一种在相对低温下生长氮化硼纳米环的简便硫蒸气辅助反应方法。

A facile sulfur vapor assisted reaction method to grow boron nitride nanorings at relative low temperature.

作者信息

Hao Xiaopeng, Wu Yongzhong, Zhan Jie, Yang Jiaxiang, Xu Xiangang, Jiang Minhua

机构信息

State Key Lab of Crystal Materials, Shandong University, Jinan 250100, People's Republic of

出版信息

J Phys Chem B. 2005 Oct 20;109(41):19188-90. doi: 10.1021/jp053500t.

DOI:10.1021/jp053500t

PMID:16853475

Abstract

Boron nitride (BN) nanorings were synthesized using a sulfur vapor assisted solid-state method at 600 degrees C. The rings had typical diameters of 100-300 nm, and the shells were 5-20 nm thick and about 50 nm wide. On the basis of the characterization of X-ray powder diffraction pattern (XRD), X-ray photoelectron spectroscopy (XPS), and Fourier transformation infrared spectroscopy (FTIR) measurement, the as-prepared product was pure-phase hexagonal BN. High-resolution transmission electron microscopy (HRTEM) images proved that the nanorings were formed through the coiling of the (002) planes of hexagonal BN. A possible growth process for BN nanorings is suggested.

摘要

采用硫蒸气辅助固态法在600℃合成了氮化硼（BN）纳米环。这些环的典型直径为100 - 300nm，壳层厚度为5 - 20nm，宽度约为50nm。基于X射线粉末衍射图谱（XRD）、X射线光电子能谱（XPS）和傅里叶变换红外光谱（FTIR）测量的表征，所制备的产物为纯相六方BN。高分辨率透射电子显微镜（HRTEM）图像证明纳米环是通过六方BN（002）面的卷曲形成的。提出了BN纳米环可能的生长过程。