Zhang Yang, Zhang Ziyu, Lin Bixia, Fu Zhuxi, Xu Jin
Department of Physics, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China.
J Phys Chem B. 2005 Oct 20;109(41):19200-3. doi: 10.1021/jp0538058.
Silver (Ag) doped and undoped ZnO films were grown on Si (100) substrates by the sol-gel process. Photoluminescence (PL) of two kinds of samples as a function of the excitation intensity has been measured, and PL intensities have been fitted by a power law. It is found that Ag doping increases the intensity of free emission from ZnO and does not change the position and the full width at half-maximum of the free exciton emission. In PL spectra of two kinds of samples under various excitation powers, no visible emission bands related to the deep levels were observed. These results reveal that doped Ag in ZnO films only enhances emission efficiency from free exciton recombination, not giving rise to new emissions.
通过溶胶-凝胶法在硅（100）衬底上生长了掺银（Ag）和未掺银的ZnO薄膜。测量了两种样品的光致发光（PL）随激发强度的变化，并通过幂律对PL强度进行了拟合。结果发现，掺银增加了ZnO的自由发射强度，且不改变自由激子发射的位置和半高宽。在不同激发功率下两种样品的PL光谱中，未观察到与深能级相关的可见发射带。这些结果表明，ZnO薄膜中掺杂的银仅提高了自由激子复合的发射效率，并未产生新的发射。
