Seitz Oliver, Böcking Till, Salomon Adi, Gooding J Justin, Cahen David
Department of Materials and Interfaces, Weizmann Institute of Science, Rehovot, Israel.
Langmuir. 2006 Aug 1;22(16):6915-22. doi: 10.1021/la060718d.
We study the effect of monolayer quality on the electrical transport through n-Si/C(n)H(2n+1)/Hg junctions (n = 12, 14, and 18) and find that truly high quality layers and only they, yield the type of data, reported by us in Phys. Rev. Lett. 2005, 95, 266807, data that are consistent with the theoretically predicted behavior of a Schottky barrier coupled to a tunnel barrier. By using that agreement as our starting point, we can assess the effects of changing the quality of the alkyl monolayers, as judged from ellipsometer, contact angle, XPS, and ATR-FTIR measurements, on the electrical transport. Although low monolayer quality layers are easily identified by one or more of those characterization tools, as well as from the current-voltage measurements, even a combination of characterization techniques may not suffice to distinguish between monolayers with minor differences in quality, which, nevertheless, are evident in the transport measurement. The thermionic emission mechanism, which in these systems dominates at low forward bias, is the one that is most sensitive to monolayer quality. It serves thus as the best quality control. This is important because, even where tunneling characteristics appear rather insensitive to slightly diminished quality, their correct analysis will be affected, especially if layers of different lengths are also of different quality.
我们研究了单层质量对通过n-Si/C(n)H(2n + 1)/Hg结(n = 12、14和18)的电输运的影响,发现只有真正高质量的层才能产生我们在《物理评论快报》2005年第95卷第266807页报道的数据类型,这些数据与理论预测的肖特基势垒与隧道势垒耦合行为一致。以这种一致性为出发点,我们可以根据椭偏仪、接触角、X射线光电子能谱和衰减全反射傅里叶变换红外光谱测量来评估改变烷基单层质量对电输运的影响。尽管低质量的单层可以通过这些表征工具中的一种或多种以及电流-电压测量轻松识别,但即使是多种表征技术的组合也可能不足以区分质量上有微小差异的单层,然而,这些差异在输运测量中是明显的。热电子发射机制在这些系统中在低正向偏压下占主导地位,它对单层质量最为敏感。因此,它是最佳的质量控制手段。这很重要,因为即使隧道特性对质量略有下降似乎不太敏感,其正确分析仍会受到影响,特别是如果不同长度的层质量也不同的话。