Akai H, Ogura M
Department of Physics, Graduate School of Science, Osaka University, 1-1 Machikaneyama, Toyonaka, Osaka 560-0043, Japan.
Phys Rev Lett. 2006 Jul 14;97(2):026401. doi: 10.1103/PhysRevLett.97.026401. Epub 2006 Jul 11.
The possibility of half-metallic antiferromagnetism, a special case of ferrimagnetism with a compensated magnetization, in the diluted magnetic semiconductors is highlighted on the basis of the first-principles electronic structure calculation. As typical examples, the electrical and magnetic properties of II-VI compound semiconductors doped with 3d transition metal ion pairs--(V, Co) and (Fe, Cr)--are discussed.
基于第一性原理电子结构计算，突出了半金属反铁磁性（一种具有补偿磁化的亚铁磁性特殊情况）在稀磁半导体中的可能性。作为典型例子，讨论了掺杂3d过渡金属离子对——（V，Co）和（Fe，Cr）——的II-VI族化合物半导体的电学和磁学性质。
