Zhao T, Scholl A, Zavaliche F, Lee K, Barry M, Doran A, Cruz M P, Chu Y H, Ederer C, Spaldin N A, Das R R, Kim D M, Baek S H, Eom C B, Ramesh R
Department of Physics, University of California, Berkeley, California 94720, USA.
Nat Mater. 2006 Oct;5(10):823-9. doi: 10.1038/nmat1731. Epub 2006 Sep 3.
Multiferroic materials, which offer the possibility of manipulating the magnetic state by an electric field or vice versa, are of great current interest. In this work, we demonstrate the first observation of electrical control of antiferromagnetic domain structure in a single-phase multiferroic material at room temperature. High-resolution images of both antiferromagnetic and ferroelectric domain structures of (001)-oriented multiferroic BiFeO3 films revealed a clear domain correlation, indicating a strong coupling between the two types of order. The ferroelectric structure was measured using piezo force microscopy, whereas X-ray photoemission electron microscopy as well as its temperature dependence was used to detect the antiferromagnetic configuration. Antiferromagnetic domain switching induced by ferroelectric polarization switching was observed, in agreement with theoretical predictions.
多铁性材料能够通过电场控制磁态,反之亦然,因此目前备受关注。在这项工作中,我们首次展示了在室温下单相多铁性材料中对反铁磁畴结构的电控制。(001)取向的多铁性BiFeO3薄膜的反铁磁和铁电畴结构的高分辨率图像显示出明显的畴相关性,表明这两种有序状态之间存在强耦合。铁电结构通过压电力显微镜进行测量,而X射线光电子能显微镜及其温度依赖性则用于检测反铁磁构型。观察到由铁电极化切换引起的反铁磁畴切换,这与理论预测一致。