Division of Quantum Phase and Devices, Department of Physics, Konkuk University , Seoul 143-701, Korea.
Korea Research Institute of Standards and Science , Daejeon 305-304, Korea.
ACS Appl Mater Interfaces. 2016 Dec 28;8(51):35464-35471. doi: 10.1021/acsami.6b12756. Epub 2016 Dec 15.
The room-temperature resistive switching characteristics of ferroelectric, ferroelastic, and multiferroic materials are promising for application in nonvolatile memory devices. These resistive switching characteristics can be accompanied by a change in the ferroic order parameters via applied external electric and magnetic excitations. However, the dynamic evolution of the order parameters between two electrodes, which is synchronized with resistive switching, has rarely been investigated. In this study, for the first time, we directly monitor the ferroelectric/ferroelastic domain switching dynamics between two electrodes in multiferroic BiFeO (BFO) planar devices, which cause resistive switching, using piezoresponse force microscopy. It is demonstrated that the geometrical relationship between the ferroelectric domain and electrode in BFO planar capacitors with only 71° domain walls significantly affects both the ferroelectric domain dynamics and the resistive switching. The direct observation of domain dynamics relevant to resistive switching in planar devices may pave the way to a controllable combination of ferroelectric characteristics and resistive switching in multiferroic materials.
铁电、铁弹性和多铁材料的室温电阻开关特性有望应用于非易失性存储器件。这些电阻开关特性可以通过施加外部电和磁激励来伴随铁电序参量的变化。然而，两个电极之间的铁电序参量的动态演化，与电阻开关同步，很少被研究。在这项研究中，我们首次使用压电力显微镜直接监测多铁 BiFeO（BFO）平面器件中两个电极之间的铁电/铁弹性畴开关动力学，该动力学导致电阻开关。结果表明，在仅具有 71°畴壁的 BFO 平面电容器中，铁电畴与电极之间的几何关系显著影响铁电畴动力学和电阻开关。在平面器件中与电阻开关相关的畴动力学的直接观察可能为多铁材料中铁电特性和电阻开关的可控组合铺平道路。
