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自催化:一种通过化学气相沉积实现单晶纳米线和纳米管生长的无污染物、无底物的生长机制。

Self-catalysis: a contamination-free, substrate-free growth mechanism for single-crystal nanowire and nanotube growth by chemical vapor deposition.

作者信息

Noor Mohammad S

机构信息

Department of Electrical and Computer Engineering, Howard University, Washington, DC 20059, USA.

出版信息

J Chem Phys. 2006 Sep 7;125(9):094705. doi: 10.1063/1.2229195.

DOI:10.1063/1.2229195
PMID:16965103
Abstract

A unified mechanism for the growth of a wide variety of long, uniform, single-crystal nanowires and whiskers, including III-V and II-VI binary, ternary, and quaternary nanowires and whiskers, without the use of any substrate and catalyst has been presented. While elucidating the mechanism, attempts have been made to provide a kinetic and thermodynamic rationale for the growth. Various features of the growth mechanism, including the formation of liquid droplets and seeds, nucleation, and creation of products, have been discussed. Extensive studies of illustrative examples provide the validity of the proposed mechanism. The influence of various parameters such as growth temperature and chamber pressure on the growth mechanism has been studied. The advantages and disadvantages of the proposed mechanism, and its superiority to the well-known vapor-liquid-solid mechanism, have been elucidated. Means to improve the mechanism to obtain self-aligned nanowires and whiskers have been suggested. Based on these, it has been demonstrated that the present mechanism is indeed a powerful self-catalytic growth mechanism uniquely suited to the growth of a wide variety of single-crystal nanowires and whiskers. It can be very useful also for the growth of single-crystal nanotubes.

摘要

已经提出了一种用于生长各种长的、均匀的单晶纳米线和晶须的统一机制,包括III-V族和II-VI族二元、三元和四元纳米线和晶须,且无需使用任何衬底和催化剂。在阐明该机制的同时,还尝试为生长提供动力学和热力学原理。已经讨论了生长机制的各种特征,包括液滴和晶种的形成、成核以及产物的生成。对示例的广泛研究证实了所提出机制的有效性。研究了诸如生长温度和腔室压力等各种参数对生长机制的影响。阐明了所提出机制的优缺点及其相对于著名的气-液-固机制的优越性。提出了改进该机制以获得自对准纳米线和晶须的方法。基于这些,已经证明当前机制确实是一种强大的自催化生长机制,特别适合于生长各种单晶纳米线和晶须。它对于单晶纳米管的生长也可能非常有用。

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Self-catalysis: a contamination-free, substrate-free growth mechanism for single-crystal nanowire and nanotube growth by chemical vapor deposition.自催化:一种通过化学气相沉积实现单晶纳米线和纳米管生长的无污染物、无底物的生长机制。
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