Carter S G, Chen Z, Cundiff S T
JILA, National Institute of Standards and Technology and University of Colorado, Boulder, Colorado 80309-0440, USA.
Phys Rev Lett. 2006 Sep 29;97(13):136602. doi: 10.1103/PhysRevLett.97.136602. Epub 2006 Sep 26.
Transient spin gratings are used to study spin diffusion in lightly n-doped GaAs quantum wells at low temperatures. The spin grating is shown to form in the excess electrons from doping, providing spin relaxation and transport properties of the carriers most relevant to spintronic applications. We demonstrate that spin diffusion of the these carriers is accelerated by increasing the density or energy of the optically excited carriers. These results can be used to better understand and even control spin transport in experiments that optically excite spin-polarized carriers.
瞬态自旋光栅用于研究低温下轻n型掺杂砷化镓量子阱中的自旋扩散。结果表明，自旋光栅在掺杂产生的过量电子中形成，提供了与自旋电子学应用最相关的载流子的自旋弛豫和输运特性。我们证明，通过增加光激发载流子的密度或能量，可以加速这些载流子的自旋扩散。这些结果可用于更好地理解甚至控制光激发自旋极化载流子的实验中的自旋输运。
