White William B, Rykaczewski Konrad, Fedorov Andrei G
Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, USA.
Phys Rev Lett. 2006 Aug 25;97(8):086101. doi: 10.1103/PhysRevLett.97.086101. Epub 2006 Aug 21.
The key physical processes governing electron-beam-assisted chemical vapor deposition are analyzed via a combination of theoretical modeling and supporting experiments. The scaling laws that define growth of the nanoscale deposits are developed and verified using carefully designed experiments of carbon deposition from methane onto a silicon substrate. The results suggest that the chamber-scale continuous transport of the precursor gas is the rate controlling process in electron-beam chemical vapor deposition.
