Campione Marcello, Sassella Adele, Moret Massimo, Papagni Antonio, Trabattoni Silvia, Resel Roland, Lengyel Ondrej, Marcon Valentina, Raos Guido
Department of Materials Science, University of Milan-Bicocca, Via R. Cozzi 53, I-20126 Milan, Italy.
J Am Chem Soc. 2006 Oct 18;128(41):13378-87. doi: 10.1021/ja058771w.
Hot-wall epitaxy and molecular-beam epitaxy have been employed for growing quaterthiophene thin films on the (010) cleavage face of potassium hydrogen phthalate, and the results are compared in terms of film properties and growth mode. Even if there is no geometrical match between substrate and overlayer lattices, these films are epitaxially oriented. To investigate the physical rationale for this strong orientation effect, optical microscopy, atomic force microscopy, and X-ray diffraction are employed. A clear correlation between the morphology of the thin films and the crystallographic orientation is found. The results are also validated by surface potential calculations, which demonstrate the primary role played by the corrugation of the substrate surface.
已采用热壁外延和分子束外延在邻苯二甲酸氢钾的(010)解理面上生长四噻吩薄膜,并从薄膜性质和生长模式方面对结果进行了比较。即使衬底和覆盖层晶格之间不存在几何匹配,这些薄膜仍呈外延取向。为了研究这种强取向效应的物理原理,采用了光学显微镜、原子力显微镜和X射线衍射。发现薄膜的形态与晶体取向之间存在明显的相关性。表面势计算也验证了结果,其表明了衬底表面波纹所起的主要作用。