应变诱导单晶VO₂纳米梁中金属-绝缘体畴的自组织

Strain-induced self organization of metal-insulator domains in single-crystalline VO2 nanobeams.

作者信息

Wu Junqiao, Gu Qian, Guiton Beth S, de Leon Nathalie P, Ouyang Lian, Park Hongkun

机构信息

Department of Chemistry and Chemical Biology and Department of Physics, Harvard University, 12 Oxford Street, Cambridge, Massachusetts 02138, USA.

出版信息

Nano Lett. 2006 Oct;6(10):2313-7. doi: 10.1021/nl061831r.

DOI:10.1021/nl061831r

PMID:17034103

Abstract

We investigated the effect of substrate-induced strain on the metal-insulator transition (MIT) in single-crystalline VO(2) nanobeams. A simple nanobeam-substrate adhesion leads to uniaxial strain along the nanobeam length because of the nanobeam's unique morphology. The strain changes the relative stability of the metal (M) and insulator (I) phases and leads to spontaneous formation of periodic, alternating M-I domain patterns during the MIT. The spatial periodicity of the M-I domains can be modified by changing the nanobeam thickness and the Young's modulus of the substrate.

摘要

我们研究了衬底诱导应变对单晶VO₂纳米梁中金属-绝缘体转变（MIT）的影响。由于纳米梁独特的形态，简单的纳米梁-衬底粘附会导致沿纳米梁长度方向的单轴应变。这种应变改变了金属（M）相和绝缘体（I）相的相对稳定性，并在MIT过程中导致周期性交替的M-I畴图案的自发形成。M-I畴的空间周期性可以通过改变纳米梁的厚度和衬底的杨氏模量来改变。