Udoy Md Rahatul Islam, Islam Md Mazharul, Johnson Elijah, Aziz Ahmedullah
Department of Electrical Engineering and Computer Science, University of Tennessee, Knoxville, TN, 37996, USA.
Department of Electrical Engineering, Columbia University, New York, NY, 10027, USA.
Sci Rep. 2025 Jan 28;15(1):3488. doi: 10.1038/s41598-025-87965-x.
This paper presents an in-pixel contrast enhancement circuit that performs image processing directly within the pixel circuit. The circuit leverages HyperFET, a hybrid device combining a MOSFET and a phase transition material (PTM), to enhance performance. It can be tuned for different modes of operation. In foreground enhancement mode, it suppresses low-intensity background pixels to nearly zero, isolating the foreground for better object visibility. In contrast enhancement mode, it improves overall image contrast. The contrast enhancement function is customizable both during the design phase and in real-time, allowing the circuit to adapt to specific applications and varying lighting conditions. A model of the designed pixel circuit is developed and applied to a full pixel array, demonstrating significant improvements in image quality. Simulations performed in HSPICE show a nearly 6x increase in Michelson Contrast Ratio (CR) in the foreground enhancement mode. Furthermore, process variation and Signal-to-Noise Ratio (SNR) analysis has been conducted to evaluate the robustness of the design under manufacturing variations. The simulation results indicate its potential for real-time, adaptive contrast enhancement across various imaging environments.
本文介绍了一种像素内对比度增强电路，该电路可直接在像素电路内进行图像处理。该电路利用了HyperFET，一种结合了MOSFET和相变材料（PTM）的混合器件，来提高性能。它可以针对不同的操作模式进行调整。在前景增强模式下，它将低强度背景像素抑制到几乎为零，隔离前景以提高物体可见性。在对比度增强模式下，它可改善整体图像对比度。对比度增强功能在设计阶段和实时过程中均可定制，使电路能够适应特定应用和变化的光照条件。开发了所设计像素电路的模型并将其应用于完整像素阵列，展示了图像质量的显著提高。在HSPICE中进行的仿真表明，在前景增强模式下，迈克尔逊对比度比（CR）提高了近6倍。此外，还进行了工艺变化和信噪比（SNR）分析，以评估设计在制造变化下的稳健性。仿真结果表明了其在各种成像环境中进行实时、自适应对比度增强的潜力。
