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低表面能聚酰亚胺栅极电介质上薄膜中三维并五苯岛相互连接导致的增强电渗流。

Enhanced electrical percolation due to interconnection of three-dimensional pentacene islands in thin films on low surface energy polyimide gate dielectrics.

作者信息

Yang Sang Yoon, Shin Kwonwoo, Kim Se Hyun, Jeon Hayoung, Kang Jin Ho, Yang Hoichang, Park Chan Eon

机构信息

Polymer Research Institute, Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 790-784, Korea.

出版信息

J Phys Chem B. 2006 Oct 19;110(41):20302-7. doi: 10.1021/jp0646527.

DOI:10.1021/jp0646527
PMID:17034211
Abstract

The role of lateral interconnections between three-dimensional pentacene islands on low surface energy polyimide gate dielectrics was investigated by the measurement of the surface coverage dependence of the charge mobility and the use of conducting-probe atomic force microscopy (CP-AFM). From the correlation between the electrical characteristics and the morphological evolution of the three-dimensionally grown pentacene films-based field-effect transistors, we found that during film growth, the formation of interconnections between the three-dimensional pentacene islands that are isolated at the early stage contributes significantly to the enhancement process of charge mobility. The CP-AFM current mapping images of the pentacene films also indicate that the lateral interconnections play an important role in the formation of good electrical percolation pathways between the three-dimensional pentacene islands.

摘要

通过测量电荷迁移率对表面覆盖率的依赖性以及使用导电探针原子力显微镜(CP-AFM),研究了低表面能聚酰亚胺栅极电介质上三维并五苯岛之间横向互连的作用。从基于三维生长并五苯薄膜的场效应晶体管的电学特性与形态演变之间的相关性,我们发现,在薄膜生长过程中,早期孤立的三维并五苯岛之间互连的形成对电荷迁移率的增强过程有显著贡献。并五苯薄膜的CP-AFM电流映射图像也表明,横向互连在三维并五苯岛之间良好的电渗流路径形成中起着重要作用。

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