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在硅晶片和其他氧化物表面上沉积十八烷基膦酸自组装单分子层。

Delivering octadecylphosphonic acid self-assembled monolayers on a Si wafer and other oxide surfaces.

作者信息

Nie Heng-Yong, Walzak Mary J, McIntyre N Stewart

机构信息

Surface Science Western, Room G-1, WSC, The University of Western Ontario, London, Ontario N6A 5B7, Canada.

出版信息

J Phys Chem B. 2006 Oct 26;110(42):21101-8. doi: 10.1021/jp062811g.

DOI:10.1021/jp062811g
PMID:17048932
Abstract

We describe a simple experimental approach for delivering self-assembled monolayers (SAMs) of octadecylphosphonic acid (OPA) on many oxide surfaces using a nonpolar medium with a dielectric constant around 4 (e.g., trichloroethylene). This approach readily results in the formation of full-coverage OPA SAMs on a wide variety of oxide surfaces including cleaved mica, Si wafer, quartz, and aluminum. Especially, the availability of delivering full-coverage OPA SAM on a Si wafer is unique, as no OPA SAMs at all could be formed on a Si wafer when using a polar OPA solution. The reason a nonpolar solvent is superior lies in the very fact that the hydrophilic OPA headgroup tends to escape from the nonpolar solution and is thus enriched at the medium-air interface. It is these OPA headgroups seeking a hydrophilic surface that make possible the well-controlled OPA monolayer on an oxide surface.

摘要

我们描述了一种简单的实验方法,可使用介电常数约为4的非极性介质(如三氯乙烯),在许多氧化物表面上沉积十八烷基膦酸(OPA)的自组装单分子层(SAMs)。这种方法能够轻松地在多种氧化物表面上形成全覆盖的OPA SAMs,包括解理云母、硅片、石英和铝。特别值得一提的是,在硅片上实现全覆盖OPA SAMs的方法具有独特性,因为使用极性OPA溶液时,根本无法在硅片上形成OPA SAMs。非极性溶剂更具优势的原因在于,亲水性的OPA头基倾向于从非极性溶液中逸出,从而在介质-空气界面富集。正是这些寻求亲水性表面的OPA头基,使得在氧化物表面能够形成可控性良好的OPA单分子层。

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