Xu Deng-Hui, Deng Zhen-Bo, Xu Ying, Xiao Jing, Liang Chun-Jun, Wang Rui-Fen
Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044, China.
Guang Pu Xue Yu Guang Pu Fen Xi. 2006 Aug;26(8):1406-10.
Electroluminescent (EL) properties of the terbium complex [Tb(m-MBA)3 phen]2 x 2H2O doped PVK system were investigated. Two kinds of devices with the structures of ITO/PVK: Tb complex/PBD/LiF/Al and ITO/PVK: Tb complex: PBD/PBD/LiF/Al were fabricated. PBD emission appears in the EL spectra of ITO/PVK: Tb complex/PBD/LiF/Al in comparison with ITO/PVK: Tb complex: PBD/PBD/LiF/Al. The reason is that PBD acts as a hole blocking material in the emitting layer (PVK: Tb complex: PBD) and thus the combination of excitons mostly occur within this layer. The energy of terbium complex emission comes from two different ways, namely energy transfer and direct combination of carriers. By altering the doping weight ratio of PBD, a set of devices were fabricated with the configuration of ITO/PVK: Tb complex: PBD/PBD/LiF/Al. Both the efficiency and brightness of these devices decrease with the rising of the PBD doping weight ratios. The efficiency of the carriers trapping may decrease with the rising of PBD doping ratios, for PBD may block the hoping of hole or electron between the PVK chains, causing a decrease in the brightness and efficiency. The PBD doping ratios have little effect on the efficiency of Förester energy transfer based on our synthesis.
研究了掺杂铽配合物[Tb(m-MBA)3 phen]2·2H2O的聚乙烯咔唑（PVK）体系的电致发光（EL）特性。制备了两种结构的器件，分别为ITO/PVK:Tb配合物/PBD/LiF/Al和ITO/PVK:Tb配合物:PBD/PBD/LiF/Al。与ITO/PVK:Tb配合物:PBD/PBD/LiF/Al相比，PBD发射出现在ITO/PVK:Tb配合物/PBD/LiF/Al的EL光谱中。原因是PBD在发光层（PVK:Tb配合物:PBD）中充当空穴阻挡材料，因此激子的复合大多发生在该层内。铽配合物发射的能量来自两种不同的方式，即能量转移和载流子的直接复合。通过改变PBD的掺杂重量比，制备了一组具有ITO/PVK:Tb配合物:PBD/PBD/LiF/Al结构的器件。这些器件的效率和亮度都随着PBD掺杂重量比的增加而降低。随着PBD掺杂比例的增加，载流子俘获效率可能会降低，因为PBD可能会阻碍空穴或电子在PVK链之间的跳跃，导致亮度和效率下降。基于我们的合成，PBD掺杂比例对福斯特能量转移效率影响不大。
